Characterization Services

Our comprehensive semiconductor characterization services provide critical in-line process control and post-process electrical testing for GaN HEMT and related technologies. We also provide design, modeling and TCAD simulation services to validate and optimize device performance.

1. In-Line Characterization

    • Spectroscopic Ellipsometry
      • Non-destructive measurement of thickness for deposited and etched layers
      • Mapping of thickness and optical constants across 4″ and 6″ wafers
    • Surface Profilometry
      • Thickness measurement of optically opaque materials
      • Analysis of topography and surface roughness
    • Optical Microscopy
      • Advanced imaging using both transmission and reflectance geometries
      • High-end image analysis and fluorescence geometry for detailed material inspection
    • DC characterization
      • Wafer-level electrical characterization, including breakdown measurements, I-V and C-V characteristics

2. RF Electrical Characterization

    • Pulsed IV and Small Signal Characterization
      • Capabilities for both wafer-level and connectorized setups
      • Wafer level characterization from 30º-200 º C
    • Comprehensive Load Pull Characterization
      • On-wafer and connectorized measurements with pulsed bias and pulsed RF capabilities
      • Harmonic Load Pull (Upto 3rd harmonic at load)
      • IMD measurement – AM/AM and AM/PM distortion

3. Power Characterization

    • Temperature-dependent measurements from 30°C to 200°C
    • High-voltage measurements up to 3 kV and 120 mA
    • High-current measurements up to 100 A pulse (maximum pulse power: 2000 W)
    • High-voltage capacitance-voltage (C-V) measurements up to 3 kV
    • Wafer-level electrical characterization, including I-V, C-V, and breakdown measurements, with ultra-low current sensitivity upto the fA range

4. Device Design, Modeling and Simulation Services

    • Modeling of GaN HEMT devices using ADS, IC-CAP, IVCAD, TCAD
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