Foundry Services

Our semiconductor foundry services deliver end-to-end fabrication capabilities optimized for GaN HEMT technology. From custom epitaxial growth to precise frontend modular processing, we provide scalable wafer-level solutions. Beyond our core GaN HEMT platforms, our process expertise and comprehensive tool set allow us to support development in emerging fields like nitride MEMS, quantum technologies and advanced photonics.

1. Epitaxy Services

    • MOCVD based GaN epitaxial growth on 4”, 6” and 8” wafers for various substrates (e.g. Si, SiC, SOI, Sapphire)
    • Custom heterostructure design (AlGaN/GaN, buffer engineering, strain management)
    • Epi stack optimization for high-voltage power and RF HEMT applications

2. GaN HEMT Process Platforms

    • 4” and 6” GaN HEMT platforms for power (E-mode, D-mode) and RF applications (D-mode)
    • Dedicated custom device development and process integration support

3. Modular Process Services (Front-End Processing)

    • Advanced Lithography: Access to tools like E-Beam, DUV stepper, Mask Aligner
    • Mask Design: Complete mask design and process integration
    • Etch & Deposition: Precision dry and wet etch processes alongside comprehensive thin-film deposition (CVD, PVD, ALD for metals, dielectrics, passivation, and barrier layers)
    • Thermal Processing: Rapid thermal annealing for dopant activation and contact formation
    • Flexible engagement: Standalone access to key fabrication steps for external customers; suitable for photonics, quantum technologies, R&D prototyping, and partial process flows (available as single-step, multi-step, or full-flow fabrication)

4. AlN MEMS

    • Leverage our extensive expertise in nitride semiconductor materials to explore the upcoming area of nitride MEMS.
    • We deposit custom AlN stacks on silicon substrates using reactive sputtering and/or MOCVD, supporting substrate sizes up to 8 inches.
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